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Silicon-germanium Heterojunction Bipolar Transistors

Silicon-germanium Heterojunction Bipolar Transistors by John D. Cressler
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This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
Artech House; April 2006
589 pages; ISBN 9781580535991
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Title: Silicon-germanium Heterojunction Bipolar Transistors
Author: John D. Cressler
 
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Georgia Tech/IBM team demonstrates first 500 GHz silicon-germanium transistors - EurekAlert (press release)
Wed, 21 Jun 2006 22:27:10 -0700
EurekAlert (press release)Georgia Tech/IBM team demonstrates first 500 GHz silicon-germanium transistorsEurekAlert (press ...