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Advances in Silicon Carbide Processing and Applications

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Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.

Key issues in selective doping of SiC via ion implantationare covered with special focus on implant conditions and electrical activationof implants. SiC applications discussed include chemical sensors, motor-controlcomponents, high-temperature gas sensors, and high-temperature electronics. Bycutting through the arcane data and jargon surrounding the hype on SiC, thisbook gives an honest assessment of today’s SiC technology and shows you how SiCcan be adopted in developing tomorrow’s applications.

Contents: SiC-BasedChemical Gas Sensors for High-Temperature and Corrosive Environments. SiCTechnology for Motor Drive Applications. Selective Doping of SiC via IonImplantation. SiC Power MOSFET Development. Power and RF BJTs in 4H-SiC: DeviceDesign and Technology.

Stephen E. Saddow is an associate professor electricalengineering at the University of South Florida, Tampa, Florida. He earned aPh.D. in electrical engineering at the University of Maryland, College Park andan M.S. in electrical engineering at Polytechnic University.

Anant K. Agarwal is a Senior Scientist at Cree Inc., Durham,North Carolina, managing the development of SiC power devices. He received a Ph.D. degree in ElectricalEngineering, in 1984, from the Lehigh University, Bethlehem, Pa and an M.S. inElectrical Engineering, in 1980, from the University of Tennessee.

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