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Book Description

Here is a thorough treatment of distortion in RF power amplifiers. This unique resource offers expert guidance in designing easily linearizable systems that have low memory effects. It offers you a detailed understanding of how the matching impedances of a power amplifier and other RF circuits can be tuned to minimize overall distortion. What’s more, you see how to build models that can be used for distortion simulations.

Anew measurement methodology enables you to gauge the amplitude and phase ofdistortion components and recognize memory effects. The book explains that bykilling memory effects, it is possible to use simple linearizers, such asanalog predistortion, and still achieve sufficient performance. You learn adistortion analysis technique that allows you to repeat the analysis with otheramplifier structures. Including over 120 equations and more than 110illustrations, this practical reference provides you with the assistance youneed to create amplifiers suitable for linear transmitters, and offers you newviews of semiconductor modeling.

Contents:

Introduction- Historical Perspective. The Approach. Main Contents of the Book. Outline ofthe Book.

SomeCircuit Theory and Terminology -- Classification of Electrical Systems.Analyzing Linear Systems. Memoryless Spectral Regeneration. Signal BandwidthDependent Nonlinear Effects. Analysis of Nonlinear Systems.

MemoryEffects in RF Power Amplifiers - Efficiency. Linearization. Electrical MemoryEffects. Thermal Memory Effects. Amplitude Domain Effects.

TheVolterra Model - Nonlinear Simulation Models. The BJT/HBT Model. CalculatingIM3 Responses. MESFET Model and Analysis.

Simulatingand Measuring Memory Effects - Simulating Memory Effects. Measuring the MemoryEffects. Memory Effects and Linearisation.

Cancellationof Memory Effects - Envelope Filtering. Impedance Optimization. EnvelopeInjection.

Characterizationof the Volterra Model - Calibration. Pulsed S-parameter Measurements. De-embedthe Effects of the Package. Calculation of Small-Signal Parameters. FittingPolynomial Models. Extracted Nonlinearity Coefficient of a MESFET. ExtractedNonlinearity Coefficient of a 30W LDMOS. DC Characterization.

AppendixA: Volterra Analysis in More Detail.

AppendixB: IM3 Equations for Cascaded 2nd-Order Distortion Mechanisms.

AppendixC: The Truncation Error.

JoelVuoleviis a linear power amplifier designer at RF Integrated Corporation, Irvine,California. He received his M.Sc. and Ph.D. in electronics from the Universityof Oulu, Finland.

TimoRahkonenis a professor in the department of electrical engineering,University of Oulu, where he received his Engineering Diploma and Doctor ofTechnology degree.



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